Le blog de l'entreprise Supply ON Infrared Product:Emitting Diodes,Photo Sensor,Photo Sensor Transistor,Reflective Sensor

Supply ON Infrared Product:Emitting Diodes,Photo Sensor,Photo Sensor Transistor,Reflective Sensor

Shenzhen Mingjiada Electronics Co., Ltd., as a specialist supplier with extensive experience in the distribution of electronic components, provides customers with high-quality products and services through its stable supply chain resources, rigorous quality control system and efficient service capabilities.

Supply Advantages

We maintain close cooperation with original equipment manufacturers and major distribution channels to ensure the authenticity of our products and sufficient stock levels. We also offer both bulk procurement and small-batch sample services to meet our customers’ diverse procurement needs. All products supplied undergo rigorous quality testing; from source selection and incoming inspection to dispatch verification, every stage adheres to standardised procedures to eliminate counterfeit and substandard products, ensuring that every item received by the customer complies with the original manufacturer’s specifications and quality requirements.

I. Emitting Diodes

Infrared light-emitting diodes (LEDs) are the core optical signal-emitting units in infrared systems. As electro-optical conversion devices, they form the basis of the light source for all infrared sensing equipment. Onsemi’s infrared light-emitting diodes utilise advanced gallium arsenide (GaAs) light-emitting chip technology. Operating on the principle of electrically stimulating the emission of infrared beams, they stably emit light in the infrared spectrum that is invisible to the human eye. The mainstream emission wavelengths are concentrated in the two general-purpose bands of 850 nm and 940 nm, making them suitable for the vast majority of infrared detection and communication applications.

This product series boasts three key characteristics. Firstly, it offers high luminous efficiency and extremely low power consumption, delivering a stable and uniform infrared beam under low-voltage drive conditions. Its energy consumption is significantly lower than that of traditional light sources, making it suitable for battery-powered portable devices. Secondly, they offer excellent beam focus and a controllable divergence angle. Precision packaging processes optimise the light propagation path, effectively reducing light signal scattering losses and enhancing long-distance transmission and detection accuracy. Thirdly, they demonstrate strong environmental adaptability, with excellent resistance to high temperatures, ageing and electromagnetic interference. They exhibit minimal light decay during long-term operation and have a service life of up to tens of thousands of hours, significantly reducing equipment maintenance costs.

ON Semiconductor’s infrared light-emitting diodes are available in a wide range of package types, including through-hole, surface-mount and miniature packages, to suit the installation space requirements of different devices. Typical applications include infrared remote control devices, supplementary lighting for infrared security surveillance, infrared temperature measurement instruments, smart access control sensors and light sources for automated equipment; they are indispensable basic components for infrared sensing and infrared communication systems.

II. Photo Sensor

Photo Sensor are light-to-electric signal conversion and detection devices developed based on the photoelectric effect. They can accurately capture changes in light intensity, presence or absence, and position, converting light signals into standard electrical signals in real time. They are core components for achieving automated detection, object recognition and status sensing. These products integrate a light detection unit with a signal processing unit, enabling independent operation without the need for complex peripheral circuits, whilst offering industry-leading detection accuracy and response speed.

Compared with traditional sensor devices, Photo Sensor offer distinct core advantages. Firstly, they utilise a non-contact detection mode; the detection process involves no mechanical contact or wear, and does not damage the object being measured, making them suitable for applications involving precision workpieces, fragile items and flexible materials. Secondly, they feature extremely fast response times; their microsecond-level signal response capability meets the real-time detection requirements of high-speed production lines and high-speed transmission equipment. Thirdly, they offer excellent interference resistance, effectively mitigating interference from ambient visible light and electromagnetic signals, whilst maintaining stable detection accuracy even in complex industrial environments or under strong lighting conditions. Fourthly, they feature a wide detection range and strong adaptability, enabling both close-range precision detection and medium- to long-range monitoring, and supporting the detection of multiple parameters such as object presence, distance, colour and displacement.

Based on a diversified product portfolio, Photo Sensor can be categorised into sub-types such as through-beam, diffuse reflection and retro-reflective sensors. They comprehensively cover applications including material counting on industrial production lines, workpiece positioning, packaging inspection, limit switching for smart machine tools, lift sensing and light-controlled adjustment of smart lighting, making them core sensing components in the fields of industrial automation and intelligent control.

III. Photo Sensor Transistor

Photo Sensor Transistor are high-precision optical signal reception and amplification devices for infrared systems. As core receiving components of photodetectors, they are specifically designed for use with infrared light-emitting diodes (LEDs) to capture, amplify and convert infrared light signals. Their operating principle is based on the semiconductor photoelectric effect: when an infrared beam strikes the photosensitive area of the chip, it excites the movement of internal charge carriers, converting a faint light signal into an amplified electrical signal. Compared to ordinary photodiodes, they possess the key characteristics of high signal gain and superior sensitivity.

Onsemi’s Photo Sensor Transistor, having undergone process optimisation, boast four key product characteristics. Firstly, ultra-high light sensitivity, capable of capturing faint reflected infrared light and transmitted infrared light over long distances, effectively enhancing the detection range and accuracy of infrared detection equipment. Secondly, excellent linearity, with a high degree of correlation between the optical signal and the output electrical signal, and an extremely low signal distortion rate, ensuring the accuracy of detection data. Thirdly, stable switching characteristics, with rapid on and off responses, free from delay or false triggering, making them suitable for high-speed signal acquisition scenarios. Fourth, a high degree of miniaturisation and integration, with a compact package, making it suitable for the integrated design of precision electronic equipment and small sensor modules.

This product primarily serves as a core infrared receiver component and is widely used in various infrared sensing devices. Typical applications include infrared ranging modules, phototransistor receiver ends, obstacle avoidance systems for smart vehicles, infrared counting devices, blood oxygen monitors and industrial optical signal acquisition modules. It is a key component for the precise detection of faint infrared signals.

IV. Reflective Sensor

ON Semiconductor’s reflective infrared sensors are fully integrated infrared detection devices. They feature a highly integrated design with the infrared light-emitting diode (LED) transmitter and the phototransistor receiver arranged in close proximity in the same direction. As no additional transmitter or receiver components are required, they can independently complete the entire process of light emission, reflection, reception and signal conversion, making them the simplest in structure and most convenient to install among infrared detection devices. The core operating principle is as follows: the emitter actively emits an infrared beam; upon contact with the object being detected, the beam is reflected; the receiver captures the reflected infrared light and, by analysing changes in light intensity, determines the presence or absence of the object and its distance, thereby outputting a switch signal.

As an integrated sensing product, this sensor offers significant advantages in terms of adaptability to various scenarios. Firstly, it features a high degree of integration and is easy to install; a single device can perform the detection function, eliminating the need for complex wiring and assembly, thereby significantly reducing equipment R&D and assembly costs. Secondly, it offers high detection stability; with a built-in optical calibration structure that focuses the infrared beam and reduces interference from ambient light, detection accuracy remains unaffected by minor changes in ambient lighting. Thirdly, it offers flexible adaptability to various scenarios, capable of detecting objects made from the vast majority of materials—including metal, plastic, paper and the human body—and is only slightly affected by the reflectivity of the object’s surface. Fourthly, it features low power consumption and high reliability, supporting long-term continuous operation with excellent resistance to vibration and ageing, making it suitable for all-weather working environments.

ON Semiconductor’s range of reflective sensors includes models such as short-range miniature variants and medium-range high-precision variants, specifically tailored to meet the requirements of different scenarios. Typical applications include sensor-activated water dispensing in smart sanitary ware, automatic door sensors, paper detection in printers, presence detection of materials on assembly lines, obstacle avoidance in robotics, sensor-activated wake-up functions in smart wearable devices, and smart sensor-based control in household appliances.