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Infineon IPL65R165CFD CoolMOS™ N-Channel Power MOSFET Transistors

Shenzhen Mingjiada Electronics Co., Ltd., as a globally renowned independent distributor of electronic components, supplies genuine IPL65R165CFD CoolMOS™ CFD2 series power transistors. This 650V N-channel MOSFET employs advanced Superjunction technology, delivering outstanding performance in high-voltage applications.

【IPL65R165CFD Product Overview and Technical Highlights】

The IPL65R165CFD is an Infineon Technologies 650V N-channel power MOSFET employing advanced CoolMOS™ CFD2 (second-generation fast diode) technology. As the successor to the 600V CFD technology, this device achieves further enhancements in energy efficiency.

As a Superjunction MOSFET, the IPL65R165CFD integrates a fast body diode, significantly improving switching performance and operational reliability. Compared to competing products, it offers softer commutation behaviour and superior electromagnetic interference (EMI) performance, which is particularly crucial in complex electronic environments.

The IPL65R165CFD utilises a PG-VSON-4 package (also known as 4-PowerTSFN or VSON-4-EP), measuring 8.1x8.1mm. Suitable for surface-mount technology, it offers excellent thermal dissipation and mechanical stability.

【Detailed Key Performance Parameters of IPL65R165CFD】

The performance parameters of the IPL65R165CFD demonstrate its advantages in power switching applications:

Voltage and Current Characteristics: The device is rated for a drain-source voltage (Vdss) of 650V, providing a safety margin above common 600V devices. At 25°C, the continuous drain current (Id) reaches 21.3A, enabling it to handle substantial power.

On-Resistance: At a gate drive voltage of 10V and a test current of 9.3A, the IPL65R165CFD exhibits a maximum on-resistance (RDS(on)) of merely 165mΩ. This low on-resistance directly translates to reduced conduction losses, enhancing overall system energy efficiency.

Switching characteristics: The IPL65R165CFD exhibits outstanding switching performance with a maximum gate charge (Qg) of 86nC (@10V) and input capacitance (Ciss) of 2340pF (@100V). Low gate charge and capacitance enable faster switching speeds and reduced drive losses.

Thermal Performance: The IPL65R165CFD achieves a maximum power dissipation of 195W (Tc) and operates across a wide temperature range of -40°C to +150°C, making it suitable for diverse harsh operating environments.

【IPL65R165CFD Technical and Structural Innovations】

The CoolMOS™ CFD2 technology employed in the IPL65R165CFD delivers multiple innovations:

Integrated Fast Body Diode: Compared to conventional MOSFETs, CFD2 technology incorporates a fast body diode with low reverse recovery charge (Qrr) during repeated body diode switching. This significantly reduces switching losses, making it particularly suitable for resonant topology applications.

Self-Limiting di/dt and dv/dt: The IPL65R165CFD possesses inherent current and voltage slew rate limiting capabilities. This aids in restricting voltage overshoot within practical circuits, reducing reliance on external buffering circuits and simplifying system design.

Low Output Charge (Qoss): The low output charge characteristic minimises switching delay time and enhances switching frequency potential. This enables designers to utilise smaller magnetic components, thereby increasing power density.

Narrower RDS(on) Distribution Window: CFD2 technology delivers a narrower window between maximum and typical on-resistance values, ensuring greater parameter consistency in actual production. This enhances predictability and reliability in system design.

【IPL65R165CFD Application Domains and Design Advantages】

The IPL65R165CFD is suitable for diverse applications demanding high efficiency and reliability:

Communications infrastructure: Servers, telecommunications power systems

Renewable energy: Solar inverters

Industrial applications: HID lamp ballasts, motor control

Consumer electronics: LED lighting drivers

Electric mobility: Battery charging, DC/DC converters

In these applications, the IPL65R165CFD's fast switching characteristics and low switching losses enable systems to operate at higher frequencies. This reduces the size and weight of passive components while increasing power density. Its outstanding EMI characteristics simplify filter design, aiding compliance with stringent electromagnetic compatibility standards.

For power supply designers, the IPL65R165CFD's relatively straightforward drive requirements ensure perfect compatibility with Infineon's EiceDRIVER™ 1EDN and 2EDN gate driver families, reducing system design complexity.